dm p2540ucb9 document number: ds 35611 rev. 5 - 2 1 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2540ucb9 new product advance information p - channel enhancement mode mosfet product summary (typ. @ v gs = - 4.5v , t a = +25c) v dss r ds(on) q g q gd i d - 25 v 33 m 4 . 8 nc 1. 0 nc - 5.2 a description and ap plications this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? battery management ? load switc h ? battery protection features and benefits ? ld - mos technology with the lowest figure of merit: r ds( on ) = 33 m ? to minimize on - state losses q g = 4 . 8 nc for ultra - fast s witching ? v gs(th) = - 0. 6 v typ. for a low turn - on potential ? csp with footprint 1.5mm 1.5mm ? height = 0.6 2 mm for low profile ? esd = 6 kv hbm protection of gate ? totally lead - free & fully rohs compliant (n otes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - wlb1515 - 9 ? terminal connections: see diagram be low ? weight: 0.00 18 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmp2540 ucb9 - 7 u - wlb1515 - 9 3 , 000/tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top - view pin configuration 3w = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) equivalent circuit u - wlb1515 - 9 3w ym g d s d d s d s s esd protected to 6kv source gate protection diode gate drain
dm p2540ucb9 document number: ds 35611 rev. 5 - 2 2 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2540ucb9 new product advance information maximum ratings ( @t a = + 25c unless otherwise specified .) characteristic symbol value units drain - source voltage v dss - 25 v gate - source voltage v gss - 6 v continuous drain current (note 5 ) v gs = - 4.5 v steady state t a = + 25 c t a = + 70 c i d - 4.0 - 3.0 a continuous drain current (note 6 ) v gs = - 4.5 v steady state t a = + 25 c t a = + 70 c i d - 5.2 - 4.0 a pulsed drain current ( pulse duration 10s, duty cycle 1% dm - 30 a continuous source pin current (note 6 ) i s - 2.0 a pul sed source pin current ( pulse duration 10s, duty cycle 1% sm - 1 5 a continuous gate clamp current (note 5 ) i g - 0. 6 a pulsed gate clamp current ( pulse duration 10s, duty cycle gm - 8 a thermal characteristics ( @t a = + 25c unless otherwise sp ecified .) characteristic symbol value units total power dissipation (note 5 ) p d 1.0 w total power dissipation (note 6 ) p d 1.8 w thermal resistance, junction to ambient (note 5 ) r ? ja 126.8 c/w thermal resistance, junction to ambient (note 6 ) r ? ja 6 9 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = + 25c unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source brea kdown voltage bv dss - 2 5 - - v v gs = 0v, i d = - 250a c = + 25c i dss - - - 1 ds = - 20 v, v gs = 0v gate - source leakage i gss - - - 1 0 0 n a v gs = - 6 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) - 0.4 - 0.6 - 1.1 v v ds = v gs , i d = - 250 a ds (on) - 3 3 40 m gs = - 4.5 v, i d = - 2a 42 5 0 v gs = - 2 .5v, i d = - 2a 52 6 0 v gs = - 1.8 v, i d = - 2a forward transfer admittance |y fs | - 12 - s v ds = - 10 v , i d = - 2 a diode forward voltage (note 5 ) v sd - - 0. 7 - 1 v v gs = 0v, i s = - 2 a reverse recovery charge q rr - 100 - nc v dd = C f = C 200a/s rr - 130 - ns dynamic characteristics (note 8 ) input capacitance c iss - 342 450 pf v ds = - 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 174 225 pf reverse transfer capacitance c rss - 70 90 pf series gate resistance r g 28 35 ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge (4.5v) q g - 4.8 6.0 nc v gs = - 4.5 v, v ds = - 10 v, i d = - 2 a gate - source charge q gs - 0.5 - nc gate - drain charge q gd - 1.0 - nc turn - on delay time t d(on) - 11 - ns v dd = - 10 v, v gs = - 4.5 v, i ds = - 2a, r g = 2 r - 12 - ns turn - off delay time t d(off) - 56 - ns turn - off fall time t f - 42 - ns notes: 5 . device mounted on fr - 4 pcb with minimum recommended pad layout . 6 . device mounted on fr4 material with 1 - inch 2 (6.45 - cm 2 ), 2 - oz. (0.071 - mm thick) cu 7 . short duration pulse test used t o minimize self - heating effect. 8 . guarant eed by design. not subject to production testing .
dm p2540ucb9 document number: ds 35611 rev. 5 - 2 3 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2540ucb9 new product advance information 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 - i , d r a i n c u r r e n t ( a ) d -v , drain -source voltage(v) fig. 1 typical output characteristics ds v = 8.0v gs v = 4.5v gs v = 2.5v gs v = 2.0v gs v = 1.5v gs v = 1.2v gs v = 1.8v gs 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 1 2 3 4 5 6 7 8 9 10 -i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 10 -i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 5v i = a gs d -4. -4 v = -2.5v i = a gs d -2
dm p2540ucb9 document number: ds 35611 rev. 5 - 2 4 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2540ucb9 new product advance information 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s 10 100 1,000 0 5 10 15 20 -v , drain-source voltage (v) fig. 9 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t c oss c rss f = 1mhz c iss 1 10 100 1,000 1 2 3 4 5 6 v , gate-source voltage (v) gs fig. 10 gate-source leakage current vs. voltage i , l e a k a g e c u r r e n t ( n a ) g s s t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 q , total gate charge (nc) fig. 11 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0.1 1 10 100 -v , drain-source voltage (v) fig. 12 soa, safe operation area ds 0.01 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d r limited ds(on) t = 150c t = 25c j(max) a v = -8v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 s w
dm p2540ucb9 document number: ds 35611 rev. 5 - 2 5 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2540ucb9 new product advance information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap0200 1 at http://www.diodes.com/datasheets/ap0200 1 .pdf for the lat est version. u - wlb1515 - 9 dim min max typ a - 0.62 - a2 - 0.36 0.36 a3 0.020 0.030 0.025 b 0.27 0.37 0.32 d 1.47 1.51 1.49 e 1.47 1.51 1.49 e - - 0.50 all dimensions in mm dimensions value (in mm) c 0.50 c1 1.00 c2 1.00 d 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 13 transient thermal resistance 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 1 r (t) = r(t) * r ?? ja ja r = 70c/w duty cycle, d = t1/ t2 ? ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse d e pin id e e 6x-? b e a2 a seating plane a3 e c c1 c d c2
dm p2540ucb9 document number: ds 35611 rev. 5 - 2 6 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2540ucb9 new product advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other chang es without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey a ny license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the co mpanies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemn ify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product na mes and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this documen t is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of t he chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, n otwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes inc orporated products in such safety - critical, life support devices or systems. copyright ? 201 5, diodes incorporated www.diodes.com
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